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| 2SB1189 / 2SB1238 Transistors Medium power transistor (-80V, -0.7A) 2SB1189 / 2SB1238 Features 1) High breakdown voltage, BVCEO=-80V, and high current, IC=-0.7A. 2) Complements the 2SD1767 / 2SD1859. External dimensions (Unit : mm) 2SB1189 4.0 1.0 2.5 0.5 1.5 0.4 (1) 3.0 Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature 2SB1189 2SB1238 Tj Tstg Symbol VCBO VCEO VEBO IC PC Limits -80 -80 -5 -0.7 0.5 2 1 150 -55 to +150 C C W 1 2 0.5 (3) V V V A 1.5 0.4 Unit 0.4 ROHM : MPT3 EIAJ : SC-62 (1) Base (2) Collector (3) Emitter 1 When mounted on a 40x40x0.7 mm ceramic board. 2 Printed circuit board 1.7 mm thick, collector plating 1cm2 or larger. 2SB1238 6.8 2.5 Packaging specifications and hFE Type Package hFE Marking Code Basic ordering unit (pieces) 2SB1189 MPT3 QR 2SB1238 ATV QR - TV2 2500 (1) (2) (3) 2.54 2.54 0.65Max. 1.0 0.9 Denotes hFE BD T100 1000 0.5 1.05 14.5 4.4 1.5 0.45 Taping specifications ROHM : ATV (1) Emitter (2) Collector (3) Base Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. -80 -80 -5 - - - 120 - - Typ. - - - - - -0.2 - 100 14 Max. - - - -0.5 -0.5 -0.4 390 - 20 Unit V V V A A V - MHz pF IC=-50A IC=-2mA IE=-50A VCB=-50V VEB=-4V IC/IB=-500mA/-50mA VCE/IC=-3V/-0.1A VCE=-10V, IE=50mA, f=100MHz VCB=-10V, IE=0A, f=1MHz Conditions Rev.A 4.5 1.6 (2) 1/2 2SB1189 / 2SB1238 Transistors Electrical characteristics curves -1.0 Ta=25C COLLECTOR CURRENT : IC (A) -5mA -0.6 -4mA -3mA -2mA -5 -2 -1 -0.5 -0.2 -0.1 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 DC CURRENT GAIN : hFE -0.8 -7mA -6mA COLLECTOR CURRENT : IC (mA) -10mA -9mA -50 A -8m -20 -10 Ta=25C VCE= -6V 500 Ta=25C 200 100 VCE= -5V -0.4 -0.2 IB= 0mA -1mA -3V 50 -1V 0 0 -2 -4 -6 -8 -10 -1 -2 -5 -10 -20 -50 -100 -200 -500 COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : IC (mA) Fig.1 Ground emitter output characteristics Fig.2 Ground emitter propagation characteristics Fig.3 DC current gain vs. collector current COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) TRANSITION FREQUENCY : fT (MHz) Ta=25C -0.2 -0.1 IC/IB=20/1 Ta=25C VCE= -5V 500 100 Ta=25C f=1MHz IE=0A 200 100 50 -0.05 Cob 20 10 IC/IB=10/1 50 -0.02 -0.01 -1 20 -5 -10 -20 -50 -100 -200 -500 2 5 10 20 50 -0.5 -1 -2 -5 -10 -20 COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) COLLECTOR TO BASE VOLTAGE : VCE (V) Fig.4 Collector-emitter saturation voltage vs.collector current Fig.5 Gain bandwidth product vs. emitter current Fig.6 Collector output capacitance vs. collector-base voltage EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR CURRENT : IC (A) 100 Cib Ta=25C f=1MHz IC=0A -1.0 -0.5 -0.2 -0.1 -0.05 -0.02 -0.01 -0.005 -0.002 Ta=25C Single pulse -0.001 -0.1 -0.2 -0.5 -1 DC 0 =1 Pw Pw s 0m =1 s m 50 20 10 -0.5 -1 -2 -5 -10 -20 -2 -5 -10 -20 -50 -100 EMITTER TO BASE VOLTAGE : VEB (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.7 Emitter input capacitance vs. emitter-base voltage Fig.8 Safe operating area (2SB1189) Rev.A 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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